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Defects in 2D Nanostructured Surfaces[edit]

Nanostructured 2D materials, such as graphene, transition metal dichalcogenides (TMDs), and black phosphorus, exhibit exceptional properties due to their unique atomic structure, properties stemming from high surface area-to-volume ratio and quantum confinement effects. However, despite their promising characteristics, these materials are susceptible to various surface imperfections that can significantly impact their performance and functionality.

Types of surface defects[edit]

Figure 1:.[1] Some examples of different types of defects present in 2D materials
  • Point Defects: It refers to presence of vacancies (Missing atoms in the lattice structure), interstitials (extra atoms occupying interstitial sites between regular lattice positions), and dopant atoms (foreign atoms incorporated into the lattice).
  • Line Defects: These are dislocations (linear defects where atomic planes are misaligned, typically arising from lattice mismatch or strain), grain boundaries (interfaces separating regions of differently oriented crystalline grains, formed during growth or processing), and edge dislocations (dislocations localized at the edges of the monolayer, resulting from incomplete atomic planes).
  • Surface Roughness: This can be due to atomic Steps, unevenness in the atomic arrangement along the edges and surfaces of the monolayer or terraces which are steps or ledges formed due to incomplete layer-by-layer growth during synthesis.

Some of the examples of different types of defects exhibited by 2D materials are shown in Figure 1.[2]

Effects of surface defects[edit]

Figure 2: Impact of S- vacancy in WS2 monolayer on band structure [3]
  • Influence on Surface Properties: Defects disrupt the perfect atomic arrangement, increasing the overall surface energy. This can lead to higher reactivity, enhanced diffusion processes, and altered surface reconstruction phenomena. They can act as adsorption sites for atoms or molecules, influencing the film's interaction with its environment. They can create preferential sites for specific species or act as barriers for others. Sometimes, these can modify the wettability of the film, impacting its interaction with liquids which can be crucial for applications like sensors, coatings, and microfluidics.
  • Impact on Electronic Properties: Defects can introduce localized energy states within the band gap of the film, altering its electrical conductivity and carrier mobility. Depending on the defect type and energy level, they can act as donors (providing electrons) or acceptors (capturing electrons). For example, figures 2a and 2b show that the pure WS2 monolayer has a direct bandgap since the top of the valence band and bottom of the conduction band are co-located at the K-point of the Brillouin zone[3]. The band structure changes from direct to indirect due to S vacancy as seen in figure 2d. [3] Also, narrowing of the band gap takes place.
Figure 3: Different point vacancy defects in TMD monolayers affecting Young’s modulus [4]
  • Influence on Mechanical Properties [4]: The presence of defects can affect the elastic modulus of the film, influencing its stiffness and response to external forces as shown in figure 3 [4].

Strategies for controlling defects[edit]

  • Post-processing Techniques [6]: Annealing or other treatments can help rearrange atoms and heal certain types of defects to improve material quality.
  • Defect Engineering: In some cases, defects can be intentionally introduced and controlled to achieve desired properties [7]. Techniques like ion implantation or controlled defect creation during synthesis can be employed for this purpose.

Characterization techniques for identifying defects[edit]

Different characterization techniques are used to analyse the surface defects. Some of the common techniques are:

References[edit]

  1. ^ Qin, Huasong; Sorkin, Viachesla; Pei, Qing-Xiang; Liu, Yilun; Zhang, Yong-Wei (2020-03-01). "Failure in Two-Dimensional Materials: Defect Sensitivity and Failure Criteria". Journal of Applied Mechanics. 87 (3). doi:10.1115/1.4045005. ISSN 0021-8936.
  2. ^ Qin, Huasong; Sorkin, Viachesla; Pei, Qing-Xiang; Liu, Yilun; Zhang, Yong-Wei (2020-03-01). "Failure in Two-Dimensional Materials: Defect Sensitivity and Failure Criteria". Journal of Applied Mechanics. 87 (3). doi:10.1115/1.4045005. ISSN 0021-8936.
  3. ^ a b c Ifti, Iztihad Mahfuz; Hasan, Md. Mahmudul; Arif, Mohammad Anwarul Hoque; Zubair, Ahmed (2020-12-17). "Effect of Vacancy on Electronic Properties of MX2 (M = Mo, W and X = S, Se) Monolayers". 2020 11th International Conference on Electrical and Computer Engineering (ICECE). pp. 391–394. doi:10.1109/ICECE51571.2020.9393141. ISBN 978-1-6654-2254-3. {{cite book}}: |journal= ignored (help)
  4. ^ a b c Kazemi, Seyedeh Alieh; Imani Yengejeh, Sadegh; Ogunkunle, Samuel Akinlolu; Zhang, Lei; Wen, William; Wee-Chung Liew, Alan; Wang, Yun (2023). "Vacancy impacts on electronic and mechanical properties of MX2 (M = Mo, W and X = S, Se) monolayers". RSC Advances. 13 (10): 6498–6506. doi:10.1039/D3RA00205E. PMC 9951067. PMID 36845596.
  5. ^ Zou, Jin (2023). "Introduction to Epitaxial growth of nanostructures and their properties". Nanoscale Advances. 5 (12): 3129–3130. doi:10.1039/D3NA90054A. ISSN 2516-0230. PMC 10262956. PMID 37325532.
  6. ^ Shiyas, K.A.; Ramanujam, R. (2021). "A review on post processing techniques of additively manufactured metal parts for improving the material properties". Materials Today: Proceedings. 46: 1429–1436. doi:10.1016/j.matpr.2021.03.016. ISSN 2214-7853.
  7. ^ Tan, Zheng Hao; Kong, Xin Ying; Ng, Boon-Junn; Soo, Han Sen; Mohamed, Abdul Rahman; Chai, Siang-Piao (2023-01-17). "Recent Advances in Defect-Engineered Transition Metal Dichalcogenides for Enhanced Electrocatalytic Hydrogen Evolution: Perfecting Imperfections". ACS Omega. 8 (2): 1851–1863. doi:10.1021/acsomega.2c06524. ISSN 2470-1343. PMC 9850467. PMID 36687105.
  8. ^ Xu, Kaikui; Holbrook, Madisen; Holtzman, Luke N.; Pasupathy, Abhay N.; Barmak, Katayun; Hone, James C.; Rosenberger, Matthew R. (2023-12-26). "Validating the Use of Conductive Atomic Force Microscopy for Defect Quantification in 2D Materials". ACS Nano. 17 (24): 24743–24752. doi:10.1021/acsnano.3c05056. ISSN 1936-0851. PMID 38095969.
  9. ^ Hossen, Moha Feroz; Shendokar, Sachin; Aravamudhan, Shyam (2024-02-23). "Defects and Defect Engineering of Two-Dimensional Transition Metal Dichalcogenide (2D TMDC) Materials". Nanomaterials. 14 (5): 410. doi:10.3390/nano14050410. ISSN 2079-4991. PMC 10934507. PMID 38470741.
  10. ^ Tsakonas, Christos; Dimitropoulos, Marinos; Manikas, Anastasios C.; Galiotis, Costas (2021). "Growth and in situ characterization of 2D materials by chemical vapour deposition on liquid metal catalysts: a review". Nanoscale. 13 (6): 3346–3373. doi:10.1039/D0NR07330J. ISSN 2040-3364. PMID 33555274.

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