Semiconductor device fabrication |
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MOSFET scaling (process nodes) |
The 350 nm process refers to the level of MOSFET semiconductor process technology that was reached around the 1993–1996 timeframe, by leading semiconductor companies like Sony, Intel and IBM.
A MOSFET with a 300 nm channel length was fabricated by a research team led by K. Deguchi and Kazuhiko Komatsu at Nippon Telegraph and Telephone (NTT) in 1985.[1]
Products featuring 350 nm manufacturing process[edit]
- Sony introduced a 16 MB SRAM memory chip manufactured with a 350 nm process in 1993.[2]
- NEC, which introduced a 350 nm 3LI CMOS process in 1994, used it for processors in the Nintendo 64 (N64) game console, released in 1996.
- Intel Pentium (P54CS, 1995), Pentium Pro (1995) and initial Pentium II CPUs (Klamath, 1997).
- AMD Am5x86 (1995) K5 (1996) and original AMD K6 (Model 6, 1997) CPUs.
- Cyrix 6x86L (1997) and 6x86 MX (1997) and some MII (1998) CPUs.
- МЦСТ-R150 (2001).
- Parallax Propeller (2006), 8 core microcontroller.[4]
References[edit]
- ^ Deguchi, K.; Komatsu, Kazuhiko; Miyake, M.; Namatsu, H.; Sekimoto, M.; Hirata, K. (1985). "Step-and-Repeat X-ray/Photo Hybrid Lithography for 0.3 μm Mos Devices". 1985 Symposium on VLSI Technology. Digest of Technical Papers: 74–75. ISBN 4-930813-09-3.
- ^ "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
- ^ "Reality Co-Processor − The Power In Nintendo64" (PDF). Silicon Graphics. Archived from the original (PDF) on 19 May 2020. Retrieved 18 June 2019.
- ^ "Propeller I semiconductor process technology? Is it 350nm or 180nm? - Parallax Forums". Forums.parallax.com. Archived from the original on 10 July 2012. Retrieved 13 September 2015.
Preceded by 600 nm |
CMOS manufacturing processes | Succeeded by 250 nm |