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Summary
| Description |
English: A transport box containing two six-inch (∅150mm) wafers made of silicon carbide, to be used as substrates for homoepitaxial growth of SiC transistor layers by means of MOVPE. A ballpoint pen was added as a scale. Note the wafer transparency is about 50 % over visible spectrum, due to sub-band absorption. Also note the elliptical darker area on the upper wafer, which is a characteristic trait of the production process being used. |
| Date | |
| Source | Own work |
| Author | FDominec |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 16:05, 16 May 2022 | | 886 × 638 (173 KB) | FDominec | Uploaded own work with UploadWizard |
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